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Upgrade Options
Control panels
Control panels
* For increased speed and productivity of experienced users
* SEM panel with magnification, focus, image shift, brighness, contrast, stigmatism, etc.
* Stage panel with trackball or joystick, XYRZ locks and store/recall functions
* USB2 controlled and fully integrated wth the microscope control software -
Upgrade Options
EA amplifiers / Lock-in EA amplifier
EA amplifiers are complex multi-stage amplification systems with integrated current & voltage sources for Electrical Analysis. All versions feature a high-speed transimpedance preamplifier for imaging, a bandwidth filter and a flexible second-stage amplifier for imaging. High-precision voltage and current sources are integrated into the compact housing, as required for biasing, IV sweeps and compensation. Packaging is miniaturised in order to reduce cable lengths, increase speed and optimise signal-to-noise ratio.
Standard features
* High-speed and low-noise ex-situ preamplifier with adjustable gain
* Automatic routing, to ground, bias or beam current meter
* Lowpass filter to match amplification with imaging speed
* Second-stage amplifier for fine image adjustments
* Voltage source for device biasing
* Current source to compensate for forward or reverse signals
* Auto-zero function for calibrationOptional features
* In-situ preamplifier for low impedance samples (with the Premium EA sample holder)
* Automatic current – voltage sweeps for device characterisationThe amplifer is part of the EA for SEM system and is designed for a wide range of Electrical Analysis techniques.
Versions
1. EA amplifier
* ex-situ preamplifier for junctions and Schottky barriers
* fully calibrated electronics for quantitative technique2. Lock-in EA amplifier
* integrated clock generator for beam blanker
* ex-situ preamplifier for junctions and Schottky barriers
* analog lock-in amplification with de-modulationControl
* USB2 hardware interface
* device driver for Microsoft Windows
* independent control library
* integrated DISS control panelInputs
* HIGH input for sample signal
* LOW input for sample gound
* DC input power (back panel)
* GND input (case)Outputs
* Amplified output for imaging (back panel)
* LOW output for bias voltage
* BC output for external beam current measurement
* EBAC output for in-situ electronicsEx-situ preamplifier
* 20,000 Ohm minimum sample resistance
* 10^3 … 10^10 V/A configurable gain
* 8 µs minimum pixed dwell time, depending on sample impedance
* 12-bit ADC for live signal inspectionIn-situ preamplifier (optional)
* 1,000 Ohm minimum recommended sample resistance
* 10ˆ7 V/A fixed transimpedanced gain
* 16 µs minimum pixed dwell time, depending on sample impedanceSecond-stage amplifier
* -1 … 1 µA, 16-bit input offset (brightness)
* 0.1 … 100x, 16-bit gain (contrast)
* 0.5 MHz at 10^9 V/A bandwidth
* 8-levels low-pass filter
* manual signal inversionIntegrated sources
* -10 … 10 V, 16-bit voltage bias
* -10 … 10 µA, 16-bit current compensation
* 100 pA internal source for calibration -
Upgrade Options
EDS detector
EDS detector
* QUANTAX Compact system by Bruker, containing XFlash® 730M silicon drift detector (SDD), an electronic module, and ESPRIT Compact software
* Allows line scanning and spectral element mapping
* Qualitative and quantitative material analyses
* Fast analysis and reporting -
Upgrade Options
HT BSE detector
Electrode-based detectors are specially designed for in-situ High Temperature experiments where conventional detectors cannot be used. This is, because light and thermal electrons emitted by the hot sample easily saturate the electronics, and because the unavoidable contamination from the in-situ conditions limits the lifetime of delicate sensors.
In this new design, BackScattered Electrons (BSE) are absorbed in robust electrodes (metal plates) placed at the detection plane, the resultant absorbed current is preamplifier in-situ, and then amplified and mixed further ex-situ. Secondary and thermal electrons are repelled away, as a bias voltage is applied to the electrodes through the detector galvanic isolation. Light, either emitted from the hot sample, or scattered from a laser heater, does not produce signal in such technology, the detector is inherently light-blind.
Electrodes can be coated in various materials to optimise absorption efficiency at particular energy ranges, e.g. Carbon coating for higher acceleration voltages, and can be easily disassembled, cleaned and recoated.
Of course, four quadrant electrodes are used to enable 3D surface analysis when combined with our calibrated SEM scan controller (DISS6) and Topographic reconstruction software.
Quadrant electrodes
* Four metal electrodes with carbon coating
* Each electrode with own in-situ preamplifier
* Adjustable bias voltage applied to all
* Size and geometry adapted to SEM modelEasy to clean
* Entire detector front end is easily removed
* Electrodes can be cleaned and recoated as needed
* Screws are used for easy on-site disassembly
* Various electrode coatings may be reappliedHigh Temperature
* Electrodes are blind to light emitted by hot samples
* Thermal electrons are filtered using the detector bias
* Maximum temperature limited only by radiative heating
* Compatible with laser heatingQuantitative measurements
* Electronic gains, offsets and bias are factory calibrated
* Amplification is temperature stabilized
* Current collected into sensing electrodes is measured
(when combined with calibrated Scan controller for SEM (DISS6) and COMPO calibration sample)Surface analysis
* TOPO and COMPO mix is done in the detector hardware
* 4Q signals are designed for topographic reconstruction
* Surface height/topography is measured
(when combined with Scan controller for SEM (DISS6) and TOPO calibration sample)SPECIFICATIONS:
Sensors
* 4x quadrant electrodes Carbon coated
* typ. 5 mm inner diameter typ. 25 mm outer diameter
* -10…10 V voltage biasPreamplifiers
* 4x mounted in-situ
* Galvanic isolation
* 5×107 V/A
* 50 kHz bandwidthMain amplifier (MICS-4)
* 4x independent signal channels
* -1.25 … 1.25 V (-50…50 mV with attenuator) input offset
* 1x … 1,800x gain
* -1.25 … 1.25 V output offset
* 3.4 MHz…34 Hz low-pass filter
* Automated 4Q global brightness and contrast
* Automated input offsets (dark correction)
* Automated gain normalization (bright correction)
* COMPO hardware mix signal (sum of BSE1…BSE4)
* TOPO hardware mixed signal (mix of BSE1…BSE4)Mechanics (LIMA)
* Port mounted, with vacuum bellows
* Motorized insertion/retraction motion
* -4…4 mm manual lateral and height alignment
* 10 µm repositioning step size
* Integrated touch alarm, with automatic stop and retraction
* Passive coolingInterfaces
* 1x USB 2.0 for amplifier control
* 1x USB 2.0 for motion control
* 1x RJ45 signal outputsSignal Outputs
* Independent BSE1…BSE4
* COMPO (sum of BSE1…BSE4)
* TOPO (mix of BSE1…BSE4)Software – Control
* Detector drawing with selectable quadrants
* Bias, brightness and contrast controls
* Individual quadrants, or grouped COMPO/TOPO control
* Automatic go to inserted/retracted positions
* Fine repositioning/adjustments in mm units
* Windows 11 … Windows 7Software – In-situ Automation
* XML file format open/save settings
* JSON/RPC interface for remote control
* Automated brightness and contrast -
Upgrade Options
microCal
Manufacturer: PTE
Product condition:
Vintage:Price: click here for enquiry
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Upgrade Options
microShape
Manufacturer: PTE
Product condition:
Vintage:Price: click here for enquiry
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SEM Upgrades
MICS-4/8/12/16 signal amplifier
Manufacturer: PTE
Product condition:
Vintage:Price: click here for enquiry
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Upgrade Options
Premium BSE detector
Manufacturer: PTE
Product condition:
Vintage:Price: click here for enquiry